The Czochralski crystal growing system SC 24 was specially developed for the industrial production of monocrystalline silicon crystals (ingots). The modular concept of the system allows a flexible adaptation to the customer’s needs. The 24″ heating unit (hotzone) is optimized for low energy consumption and designed for a charge of up to 160 kg of silicon (without feeding unit) and for crystals with up to 230 mm (9″) diameter. Depending on diameter and loading, crystals with a length of up to 2.9 m can be pulled. The crystal pulling speed is max. 10 mm/min and the rotation speeds of crystal and crucible up to 35 rpm.
With the help of a camera system for diameter measurement and two pyrometers for temperature measurement, automatic process control is possible by means of PLC (programmable logic controller) and PC. The user-friendly graphical interface for process control and monitoring is optimized for mass production.
| Max. Ingot diameter: | Up to 230 mm |
| Ingot length: | Up to 2.900 mm |
| Charge capacity: | 160 kg (up to 220 kg) |
| Hotzone: | 24″ |
