english | deutsch
  Home Applications Semiconductor  
   
MEMS SU8 Ashing  

Plasma Based Solutions:

Semiconductor wafer
Photoresist Ashing
Ultra Thin Wafer
Wafer Stress Relief
Chip Side Stress Relief
Post CMP Treatment
Wafer Thinning
Surface Passivation
Solar Cells
Solar Cell Etching
MEMS
MEMS SU8 Ashing
Flat Panel Displays
Pixel Activation
FP Photoresist Ashing
Bond Finger Cleaning
Chip Packaging
Bond Pad Cleaning
Flip Chip Underfill
Encapsulation
Wafer Metrology
Stress Imaging
Implant Dosage
Failure Analysis
Decapsulation

Efficient SU8 Ashing & Sacrificial Layer Removal

Courtesy of SNU, Korea Courtesy Of University of Texas at Dallas

Efficient SU-8 Ashing and
sacrificial layer removal

SU-8 photoresist has many remarkable properties that are ideally suited for use in the fabrication of MEMS and microfluidic devices. Among the many merits of this photoresist for MEMS manufacture, is its chemical stability, which makes it difficult to remove. PVA TePla has successfully developed a plasma process and system technology to remove SU-8 with dry plasma ashing. Also for removing sacrificial layers, the isotropic etch property of microwave plasma is of advantage to undercut the top layer.

To Request a Brochure/Literature/Product CD, Click Here

Related Products:
1
a

This series of microwave batch resist ashers ranges from manual to fully automated accommodating wafers from 2" to 8" (50 to 200 mm)

GIGAbatch series
b
a Fully automatic single wafer resist
stripping system for implant resist
and MEMS applications for wafers
up to 300 mm
GIGAfab A200/300
b
PS 4008
Plasma system with large area planar source technology for low temperature ashing of SU-8 and other sensitive organic layers. Used in MEMS fabrication and OLED/PLED development. Holds one 300 mm wafer or four 150 mm wafers
GIGAfab M
c
M4L Laboratory or pilot scale bench top microwave system ideal for resist ashing, wafer cleaning and decapsulation of electronic devices
IoN 10
a
 

 

 
 

© 2010 PVA TePla America. All rights reserved.