Silicon Star 12M System | PVATePla America, Inc.
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Silicon Star 12 M

Technical Specifications:

Plasma Chamber: Anodized Aluminum, Diameter 460 mm, Volume: 80 liter

Plasma Generation: MW Frequency 2.45 GHz, max. 2000 Watt, variable power

Dimension:
W x H x D = 650 x 2010 x 1000 mm

Weight: 460 kg

Options:
  Extra gas channels
  Vacuum pump system
  Cooling units for MW and Chuck cooling

Related Applications:

  • Stress Relief
  • Wafer Thinning
  • Passivation
  •  

    Silicon Star 12M

    Manual Remote Microwave Plasma System

    The Silicon Star 12 M is a remote cold plasma system based on microwave plasma generation. The manual machine is ideally suited for many different applications such as stress relief, special surface treatments and wafer thinning. In this plasma system the dry etching effect is based on pure chemical reaction of reactive plasma particles (radicals) guided through the chamber downstream configuration.

    The Silicon Star 12 M system is easy to operate and features simple manual loading and unloading. The process does not require any additional substrate cleaning. The surface treatment is performed strictly by pure radical species. The electron-free and ion-free processing is the key factor for the successful treatment of extreme sensitive silicon substrates like NAND and DRAM. The plasma is generated by a 2.45 GHz Magnetron located about 60 cm above the wafer on top of the process chamber. Compatible with run all wafer sizes as well as 8” and 12” framed wafers.

    This Tool is ideally suited for process development and pilot line production.


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