Thin Wafer
Thin Wafer
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Wafer thinning by plasma etch

 

Plasma Based Solutions:

Semiconductor wafer
Photoresist Ashing
Solar Cells
Solar Cell Etching
MEMS
MEMS SU8 Ashing
Flat Panel Displays
Pixel Activation
FP Photoresist Ashing
Bond Finger Cleaning
Chip Packaging
Bond Pad Cleaning
Flip Chip Underfill
Encapsulation
Wafer Metrology
Stress Imaging
Implant Dosage
Failure Analysis
Decapsulation

 Plasma thinning wafers <30m

Wafer Thinning, Passivation, Texturing, Porous Silicon, Rough Silicon, Ion Gettering, Copper, Nickel, Gettering, Cu-gettering, Ni-gettering, Hysteresis, Sensor, Pressure Sensor, BiCMOS For Stacking Dies, the final chip thickness is reduced to 30 µm and below. In production, however, these thicknesses cannot be achieved by grinding, especially since stress relief in high volume production becomes an important issue at 50 µm and below. The Cu-plugs for 3D-Interconnects require contact-free treatment without metal contamination. For this application PVA TePla offers the advanced technology of wafer thinning by smooth remote plasma etching. With excellent uniformity we can extend our stress relief process for wafer thinning. The ASYNTIS 2.2 is designed for high throughput in this advanced market. Wafer Thinning can be applied in-situ with Stress Relief and Passivation.

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Plasma System for processing of 6", 8", and 12" wafers / framed wafers

GIGAfab ASYNTIS M
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What is plasma?
Plasma Technology
 
Why Microwave?
Microwave Plasma Technology
 
Why
Ultra Thin Wafers?
 
Wafer Thinning Semiconductor Application
 
  Why Stress Relief?
Semiconductor Application Stress Relief
 
 

Why
Plasma Treatment?

 
Plasma Treatment Systems

 

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