Examples of Silicon Surfaces roughened by dry chemical etching after Remote Cold Plasma
PVA Tepla's Downstream cold plasma surface treatment can be used in combination with other traditional wafer stress-relief methods, e.g. CMP, to prepare the wafers for subsequent process steps. For example, plasma is used to prepare power devices for back-side metallization. Plasma cleaning, along with its micro-roughning effect, modifies the mirror like CMP surface improving its ability to be metallized. Post CMP treatment can be applied in-situ with Wafer Stress Relief and Wafer Thinning.
