Post CMP wafer plasma etch to enhance metallization
Examples of Silicon Surfaces roughened by dry chemical etching after Remote Cold Plasma
PVA Tepla's Downstream cold plasma surface treatment can be used in combination with other traditional wafer stress-relief methods, e.g. CMP, to prepare the wafers for subsequent process steps. For example, plasma is used to prepare power devices for back-side metallization. Plasma cleaning, along with its micro-roughning effect, modifies the mirror like CMP surface improving its ability to be metallized. Post CMP treatment can be applied in-situ with Wafer Stress Relief and Wafer Thinning.