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Ultra Thin Wafers
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Plasma Based Solutions:
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Post CMP Treatment
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| Examples of Silicon Surfaces roughened by dry chemical etching after Remote Cold Plasma |
PVA Tepla's Remote cold plasma surface treatment can be used in combination with other traditional wafer stress-relief methods, e.g. CMP, to prepare the wafers for subsequent process steps. For example, plasma is used to prepare power devices for back-side metallization. Plasma cleaning, along with its micro-roughning effect, modifies the mirror like CMP surface improving its ability to be metallized. Post CMP treatment can be applied in-situ with Stress Relief and Wafer Thinning.
To Request Application Literature or Further Information, Click Here
Related Products: |
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New Generation
Fully Automated High Throughput Plasma System for 6", 8" and 12" Wafers, and up to 12" Framed Wafers |
| Asyntis 2.2 |
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Fully Automated Plasma System for 8" and 12" Wafers
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| Silicon Star 12 |
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Manual Plasma System for 6", 8" and 12" Wafers (up to 12" Framed Wafers)
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| Silicon Star 12 M |
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OEM Plasma System (automatic door) for 6", 8", and 12" Wafers
For Integration in Cluster Tool e.g. between grinder + mounter |
| Silicon Star 12 OEM |
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