Ion Beam Etching for Microstructiuring of III/V-Materials

For the high definition microstructuring of wide band gap materials, PVA TePla offers a unique Reactive Ion Beam Etching System for wafers up to 4” in diameter. A typical application is the creation of laser mirrors, facetted with smooth surfaces and a controlled wall angle for VCSELs. The model “RIBETCH 160 ECR” offers two modes of etching, the RIBE-mode (reactive ion beam etching) and the CAIBE-mode (chemically assisted ion beam etching). Equipped with a load-lock system, the machine can run with chlorinated process gases and features filament-free ECR-microwave ion beam source technology, a Peltier-cooled sample stage and state-of the-art computer control.

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	This reactive ion beam etching system is used for microstructuring of microelectronic or electro-optical devices and is suitable for etching processes with argon ions (IBE) as well as for chemically reactive etching processes (RIBE, CAIBE).
RIBETCH 160 ECR