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Die stress removal by plasma etch

 

Plasma Based Solutions:

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Chip side wall plasma etch post dicing

Chip Side Healing Stress ReliefDuring the singulation process a high speed rotating dicing saw or high energy laser beam separates the chips. The silicon material within the “street” proximity is as much destroyed as the backside of the wafer after grinding. The quality of the side walls is a determining factor in the strength of the die. Downstream plasma treatment allows access to the side walls of the chips immediately after dicing. Pure, dry, chemical isotropic etching, can be applied to the back-side after singulation (DBG-Process) or after dicing from the front side. We call this process CSH (Chip Side Healing). Once the silicon is treated on all side walls of the chip as well as on the back side, the maximum physical die strength is achieved (“the perfect die”). Chip Side Healing can be applied in-situ with Passivation.

Chip Side Healing using a remote cold plasma

chip stress relief using a remove cold plasma

Downloads:

- Flyer about ultra thin wafers and chips (Flexibility after CSH process “Chip Side Healing”)

- New Brochure about all our Ultra Thin Wafer Applications

To Request Application Literature or Further Information, Click Here

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What is plasma?
Plasma Technology
 
Why Microwave?
Microwave Plasma Technology
 
Why
Ultra Thin Wafers?
 
Wafer Thinning Semiconductor Application
 
  Why Stress Relief?
Semiconductor Application Stress Relief
 
 

Why
Plasma Treatment?

 
Plasma Treatment Systems

 

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