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Ultra Thin Wafers
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Plasma Based Solutions:
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Chip Side Healing (CSH)
During the singulation process a high speed rotating dicing saw or high energy laser beam separates the chips. The silicon material within the “street” proximity is as much destroyed as the backside of the wafer after grinding. The quality of the side walls is a determining factor in the strength of the die. Remote plasma treatment allows access to the side walls of the chips immediately after dicing. Pure, dry, chemical isotropic etching, can be applied to the back-side after singulation (DBG-Process) or after dicing from the front side. We call this process CSH (Chip Side Healing). Once the silicon is treated on all side walls of the chip as well as on the back side, the maximum physical die strength is achieved (“the perfect die”). Chip Side Healing can be applied in-situ with Passivation.
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Related Products: |
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New Generation
Fully Automated High Throughput Plasma System for 6", 8" and 12" Wafers, and up to 12" Framed Wafers |
| Asyntis 2.2 |
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Fully Automated Plasma System for 8" and 12" Wafers
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| Silicon Star 12 |
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Manual Plasma System for 6", 8" and 12" Wafers (up to 12" Framed Wafers)
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| Silicon Star 12 M |
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OEM Plasma System (automatic door) for 6", 8", and 12" Wafers
For Integration in Cluster Tool e.g. between grinder + mounter |
| Silicon Star 12 OEM |
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