Plasma System 90 | PVATePla America, Inc.
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Microwave Plasma System 90

Technical Specifications:

Wafer sizes:
200 and 300 mm

Plasma Chamber:

 Aluminum

Chucking system:
 Wafer chuck with lift pins

Wafer transportation:
 Atmospheric transfer robot
 Loading station for FOUP, SMIF
 or OLP (Open Load Port)

Plasma Generation:
 Unique planar MW source for
   large area uniformity
 Frequency 2.45 GHz
 max. 2000W
 variable Power

System Dimension:
 W x H X D = 850 x 2.000 x 2.060 mm

Weight: 1000 kg

Options:
 Additional gas channels 3-4
 Automatic pressure control
 Vacuum pump system
 Heating chuck
 Cooling chuck
 Hydrogen Generator Wafer chuck with heater
 or cooling stage option

  • Photoresist Ashing

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    Microwave Plasma System PS 90

    The PS 90 is an extremely compact, high-performance, automatic Single Wafer Asher providing very low cost of ownership. It is designed to serve MEMS-manufacturing as well as main stream semiconductor resist stripping and descum applications in semiconductor device fabrication for wafer sizes up to 300 mm. Unique system characteristics like strong isotropy and high ash rates at moderate substrate temperatures make it a perfect tool for a wide range of wafer cleaning and stripping applications like:

    • Resist removal and descum in wafer bumping
    • Sacrificial layer removal of photoresist, polyimide, PMMA etc.
    • Fast resist ashing after high-dose implant and RIE
    • 300 mm wafer reclaim
    • Removal of SU-8 epoxy resist
    • Silicon nitride etch

    The PS 90 is equipped with a unique planar microwave plasma source for utmost uniformity, providing high ash rates over a wide temperature range. In combination with Chemraz-seals, fluorinated process gases can be applied. Also offered is an ATEX-certified Hydrogen gas option with H2-generator, enabling the user to apply Hydrogen as process gas in any concentration. The modular platform allows to configure the system for 200 or 300 mm wafers using open cassette as well as FOUP or SMIF load stations. The wafer chuck with lift pins for loading is thermoelectrically controlled from RT to 250°C.


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